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| 2N3906 PNP General Purpose Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current Total Device Dissipation TA=25 C Junction Temperature Storage, Temperature Symbol VCEO VCBO VEBO IC PD Tj Tstg Value -40 -40 -5.0 -200 0.625 150 -55 to +150 Unit Vdc Vdc Vdc mAdc W C C ELECTRICAL CHARACTERISTICS Characteristics Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0) Collector-Base Breakdown Voltage (IC= -100 uAdc, IE=0) Emitter-Base Breakdown Voltage (IE= -100 uAdc, IC=0) Collector Cutoff Current (VCE= -40 Vdc, I B =0) Collector Cutoff Current (VCB= -40 Vdc, IE=0) Emitter Cutoff Current (VEB= -5.0Vdc, I C =0) Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICE0 ICBO IEBO Min -40 -40 -5.0 Max -0.1 -0.1 -0.1 Unit Vdc Vdc Vdc uAdc uAdc uAdc WEITRON http://www.weitron.com.tw 2N3906 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min TYP Max Unit ON CHARACTERISTICS DC Current Gain (IC= -10 mAdc, VCE=-1.0 Vdc) DC Current Gain (IC= -50 mAdc, VCE= 1.0 Vdc) Collector-Emitter Saturation Voltage (IC= -50 mAdc, IB= -5 mAdc) Base-Emitter Saturation Voltage (IC= -50 mAdc, IB= -5 mAdc) Current-Gain-Bandwidth Product (IC= 10 mAdc, VCE= 20 Vdc, f=100MHz) hFE (1) hFE (2) VCE(sat) VBE(sat) fT 100 60 250 - 400 -0.3 -0.95 Vdc Vdc - - MHz Classification of hFE(1) Rank Range O 100-200 Y 200-300 G 300-400 WEITRON http://www.weitron.com.tw 2N3906 WEITRON http://www.weitron.com.tw 2N3906 TO-92 Outline Dimensions E unit:mm TO-92 H C J K G Dim A B C D E G H J K L Min Max 3.70 3.30 1.40 1.10 0.55 0.38 0.51 0.36 4.70 4.40 3.43 4.70 4.30 1.270TYP 2.44 2.64 14.10 14.50 B L WEITRON http://www.weitron.com.tw D A |
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